Photodiode Having Hetero-Junction Between Semi-Insulating Zinc Oxide Semiconductor Thin Film And Silicon
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United States of America Patent
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Issued Date -
May 22, 2008
app pub date -
Jun 16, 2005
filing date -
Jan 25, 2005
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Abandoned
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Abstract
A photodiode which eliminates sensitivity reduction in a short wavelength region such as blue, an unavoidable problem posed by doping, resolves response reduction by the scattering of acceptor ions or impurities due to doping of impurities at the same time, and has very high sensitivity and fast response in a UV-IR range. A photodiode having a hetero-junction between a semi-insulating zinc oxide semiconductor thin film and silicon and comprising, basically, n-type silicon (1) and a semi-insulating zinc oxide semiconductor thin film (3) formed on the n-type silicon, characterized in that the n-type silicon forms a cathode region, and the formation of a semi-insulating zinc oxide semiconductor thin film produces a p-type inversion layer (4) at the upper portion of the n-type silicon in contact with the semi-insulating zinc oxide semiconductor thin film, the p-type inversion layer forming a photo-detection region and an anode region.
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