Apparatus and method for manufacturing semiconductor single crystal
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United States of America Patent
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Issued Date -
May 22, 2008
app pub date -
Nov 7, 2007
filing date -
Nov 16, 2006
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Abandoned
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Abstract
A semiconductor single crystal manufacturing apparatus and method are provided which are capable of improving the speed of designing and arranging a silicon single crystal manufacturing apparatus while reducing labor by making it possible to instantaneously find optimum design values and optimum arrangement for a cooler without requiring a lot of labor or time, regardless of a housing structure of a CZ furnace, in-furnace members' configuration, and manufacturing conditions. Stable manufacture of defect-free silicon single crystals is also made possible by designing and arranging the cooler such that when a heat absorption amount of the cooler is denoted by Q and a semiconductor single crystal radius is denoted by r, the heat absorption amount of the cooler Q satisfies r.sup.2/1100.ltoreq.Q.ltoreq.r.sup.2/400, or alternatively Q satisfies r.sup.2.7/20500.ltoreq.Q.ltoreq.r.sup.2.7/19300.
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