Method for Forming Light Absorption Layer of Cis Type Thin-Film Solar Cell
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United States of America Patent
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Issued Date -
May 15, 2008
app pub date -
Dec 26, 2005
filing date -
Dec 28, 2004
priority date (Note) -
Abandoned
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Abstract
A simple device is used to make the temperature in an apparatus even and improve the state of being in contact with reactant gases, selenium, and sulfur. A fan 3 as a device for atmosphere homogenization is disposed in an apparatus, and the work is disposed in the manner which enables a reactant gas to circulate smoothly. Namely, flat platy works 2 are disposed apart from each other at a certain distance parallel to the direction of the major axis of the apparatus while keeping the plates vertical so that the apparatus has passages within the group of works and has gas passages over and under the works and on both sides thereof. Thus, each work is apt to come into contact with the reactant gases in the apparatus and the temperature in the apparatus is even. The state of being in contact with the reactant gases, selenium, and sulfur is improved.
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