POLYCRYSTALLINE SILICON THIN FILM AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
Apr 24, 2008
app pub date -
Oct 19, 2007
filing date -
Oct 23, 2006
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Abandoned
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Abstract
A polycrystalline silicon thin film having grains defined by grain boundaries is provided. The polycrystalline silicon thin film is formed by interposing a cover layer between an amorphous silicon layer and a metal layer to diffuse the metal into the amorphous silicon layer through the cover layer, removing the cover layer, crystallizing the amorphous silicon layer to be changed to a polycrystalline silicon layer, depositing a metal on the polycrystalline silicon layer, and annealing the polycrystalline silicon layer. Specifically, the polycrystalline silicon thin film is formed by sequentially forming an amorphous silicon layer, a cover layer and a metal layer on an insulating substrate, annealing the amorphous silicon layer to be changed to a polycrystalline silicon layer, removing the cover layer, depositing a metal on the polycrystalline silicon layer, followed by annealing so that the average density per unit volume of the metal particles present at the grain boundaries is greater than that of the metal particles present within the grains.
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