SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Apr 24, 2008
app pub date -
Oct 5, 2007
filing date -
Oct 10, 2006
priority date (Note) -
Abandoned
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Abstract
Provided is a semiconductor device that solves the problem of a conventional semiconductor device. In the conventional semiconductor device, a resistor is connected with a wiring layer via a contact hole, so that a reduction in parasitic capacitance of the resistor and a substrate is hard to be accomplished. In the semiconductor device of the present invention, a resistor made of a titanium nitride (TiN) film is directly connected with wiring layers on an insulating layer. This structure contributes to an increase in the contact area between the resistor and the wiring layers, and then to a reduction in the contact resistance. Furthermore, a broader separation distance between the resistor and an epitaxial layer contributes to a reduction in the parasitic capacitance in the resistor and to an improvement in the high-frequency characteristics of the semiconductor device.
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