Semi-Conductor Element Comprising An Integrated Zener Diode And Method For The Production Thereof
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United States of America Patent
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Issued Date -
Apr 24, 2008
app pub date -
Jan 19, 2005
filing date -
Mar 10, 2004
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Abandoned
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Abstract
In order to protect a semiconductor component against overvoltages, the steps which are used for production of bipolar transistors and CMOS structures in the semiconductor component are used for integrated parallel production of a zener diode. This has a first and a second n-doped zone, which extend between the surface of a semiconductor substrate and an n-doped buried region. The first n-doped zone is oppositely doped with p-doping in an area adjacent to the surface, and represents a p-doped region. A first contact is provided to the p-doped region, and a contact is on the other hand provided to the second n-doped zone, with the two contents forming the two connections of the zener diode.
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