APPARATUS AND METHOD FORMING A CONTACT TO SILICIDE AND A CONTACT TO A CONTACT
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United States of America Patent
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Issued Date -
Apr 17, 2008
app pub date -
Oct 2, 2006
filing date -
Oct 2, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An apparatus and method for forming a contact to silicide through an active diffusion region, a contact to a contact through an active diffusion region, and a contact to a polysilicon structure through a shallow trench isolation region to create a conductive connection with a circuit node of interest. In one embodiment, an opening through the active diffusion region to an associated silicide layer is used to form the conductive connection. In another embodiment, an opening through the active diffusion region to an associated contact is used to form the conductive connection. In yet another embodiment, an opening through a shallow trench isolation region to a polysilicon structure is used to form the conductive connection.
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