Aligned crystalline semiconducting film on a glass substrate and method of making
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 24, 2010
Grant Date -
Apr 17, 2008
app pub date -
Oct 17, 2006
filing date -
Oct 17, 2006
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750° C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully