Copper Doped Magnetic Semiconductors
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United States of America Patent
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Issued Date -
Apr 17, 2008
app pub date -
May 17, 2005
filing date -
May 18, 2004
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Abandoned
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Abstract
A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55.degree. C. and 125.degree. C. Typically the material may comprise GaP or GaN.
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