Surface acoustic wave device
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United States of America Patent
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app pub date -
Nov 29, 2007
filing date -
Dec 3, 2004
priority date (Note) -
Abandoned
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Abstract
A surface acoustic wave device is provided. The surface acoustic wave device includes a piezoelectric substrate and an IDT which is disposed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component and using an SH wave as an excitation wave, wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle .theta. set to a range of -64.0<.theta.<-49.3.degree. rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90.degree..+-.5.degree. with respect to an X crystalline axis, wherein, when a wavelength of an excited surface acoustic wave is denoted by .lamda., an electrode film thickness H/.lamda. normalized with wavelength of the IDT is set to a range of 0.04
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Patent Owner(s)
Patent Owner Address EPSON TOYOCOM CORPORATION HINO-SHI TOKYO 191-8501 International Classification(s)
Inventor(s)
Inventor Name
Address
# of filed Patents
Total Citations
Morita, Takao
Nagano-ken, JP
35
883
Owaki, Takuya
Nagano-ken, JP
25
236
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