Semiconductor device and a method of manufacture therefor
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United States of America Patent
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app pub date -
Oct 31, 2007
filing date -
Feb 13, 2004
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Abandoned
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Abstract
The present invention provides a semiconductor device, and an integrated circuit including the semiconductor device. The semiconductor device, in one embodiment, includes: (1) a gate structure located over a substrate, the gate structuring including a gate dielectric and gate electrode; (2) source/drain regions located within the substrate proximate the gate structure, (3) a multi layer etch stop located over the substrate, wherein the etch stop has a first insulative layer and a second silicon-rich nitride layer located over the first insulative layer, (4) a dielectric layer located over the etch stop, the dielectric layer having an opening formed therein that extends through at least a portion of the multi layer etch stop, (5) a conductive plug located within the opening and electrically contacting the gate electrode and one of the source/drain regions, and (6) an insulative spacer located between the conductive plug and the second silicon-rich nitride layer.
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