Method to form decoupling capacitors on IC chip and the structure thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2008
app pub date -
Sep 27, 2006
filing date -
Sep 27, 2006
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method to form decoupling capacitors on an IC chip and the structure thereof includes forming several metal layers on a low-metal-covering-ratio region of the IC chip and connecting these metal layers to the ground, source voltage respectively, in order to form parasite metal capacitors that can be as decoupling capacitors with satisfying the metal covering rules so as to make good use of the IC chip space.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully