Controlled shape semiconductor layer by selective epitaxy under seed structure
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United States of America Patent
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Mar 30, 2010
Grant Date -
Mar 27, 2008
app pub date -
Sep 26, 2006
filing date -
Sep 26, 2006
priority date (Note) -
Expired
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Abstract
A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.
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