METHOD FOR FORMING DOPED METAL-SEMICONDUCTOR COMPOUND REGIONS
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Jul 30, 2007
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Jul 31, 2006
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Abstract
A method for forming doped metal-semiconductor compound regions in a substrate is disclosed. In one aspect, a method for forming silicide regions in a substrate comprises partially regrowing an upper amorphous region on top of a crystalline part of the substrate, after having doped the upper amorphous region, to form a regrown region, thereby leaving a remaining upper amorphous region in between the regrown region and the major surface of the substrate. The remaining upper amorphous region is used for forming the metal-semiconductor compound.
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