Ion implantation device

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United States of America Patent

PATENT NO 7511288
APP PUB NO 20080054192A1
SERIAL NO

11575197

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Abstract

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To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°.A which applies an electric potential having desired scanning waveform.

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Patent Owner(s)

Patent OwnerAddress
ULVAC CO LTD2500 HAGIZONO CHIGASAKI-CITY KANAGAWA 253-8543

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishihashi, Tsutomu Susono, JP 16 75
Ogata, Seiji Chigasaki, JP 5 34
Sakurada, Yuzo Susono, JP 6 80
Sekiguchi, Masayuki Toshima-Ku, JP 22 73

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