Silicon Carbide Single Crystal and Method of Etching the Same
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United States of America Patent
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Issued Date -
Feb 28, 2008
app pub date -
Jul 6, 2005
filing date -
Jul 8, 2004
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Abandoned
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Abstract
Single-crystal silicon carbide is obtained, which finds a wide variety of applications including semiconductors, and an etching method for single-crystal silicon carbide is provided, by which nitrogen trifluoride plasma is used in single-crystal silicon carbide to obtain a smooth surface. In order to obtain single-crystal silicon carbide having the smoothness (surface roughness) within 150 nm and the material, nitrogen trifluoride-containing gas is subjected to plasma excitation to obtain single-crystal silicon carbide with a smooth surface. It is preferable that the pressure of nitrogen trifluoride gas is in the range of 0.5 to 10 Pa. It is also preferable that the flow rate of the nitrogen trifluoride gas is in the range of 5 to 15 sccm.
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