Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device

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United States of America Patent

PATENT NO 7737614
APP PUB NO 20080048544A1
SERIAL NO

11665459

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Abstract

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or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA JAPAN OSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imai, Takahiro Itami, JP 179 2278
Nishibayashi, Yoshiki Itami, JP 95 707
Ueda, Akihiko Itami, JP 62 341
Yamamoto, Yoshiyuki Itami, JP 122 1470

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