Single crystal scintillator materials and methods for making the same

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United States of America Patent

PATENT NO 7569109
APP PUB NO 20080047482A1
SERIAL NO

11509129

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Abstract

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A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.

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Patent Owner(s)

Patent OwnerAddress
GENERAL ELECTRIC COMPANY1 NEUMANN WAY MAIL DROP F16 EVENDALE OH 45215-6301

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Venkataramani, Venkat Subramaniam Clifton Park , US 88 1475

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