Bottom resist layer composition and patterning process using the same
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United States of America Patent
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Jun 29, 2010
Grant Date -
Feb 14, 2008
app pub date -
Jul 10, 2007
filing date -
Aug 10, 2006
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Abstract
There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
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