Semiconductor junction device having reduced leakage current and method of forming same
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United States of America Patent
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Issued Date -
Feb 14, 2008
app pub date -
Jul 12, 2007
filing date -
Aug 10, 2006
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Abandoned
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Abstract
A semiconductor junction device includes a semiconductor substrate of a first conductivity type and a junction layer formed on the substrate which has a second conductivity type. A field reducing region of the first conductivity type surrounds a periphery of the junction layer and extends under a peripheral portion of the junction layer. An insulating layer is provided on the field reducing region and a metal layer overlies the junction layer and the insulating layer.
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