Process For Producing Zno Transparent Conductive Film By Mocvd (Metal-Organic Chemical Vapor Deposition) Method
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United States of America Patent
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Issued Date -
Feb 7, 2008
app pub date -
Dec 27, 2005
filing date -
Dec 28, 2004
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Abandoned
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Abstract
The triethylaluminum contained as an impurity in low-purity raw-material diethylzinc, which is inexpensive, is utilized as an additive to reduce the cost of film formation. Diethylzinc having a low purity (99.99-98% or 99.99-90%) is used as a raw material to produce a ZnO transparent conductive film by the MOCVD (metal-organic chemical vapor deposition) method. Water vapor (H.sub.2O) is used as an oxidizing agent and the triethylaluminum contained as an impurity in the raw material is utilized as an additive (diborane is further added as an additive) to cause the diethylzinc, the water vapor (H.sub.2O), and the triethylaluminum (and the diborane) to undergo a vapor-phase reaction to produce a ZnO transparent conductive film.
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