METHOD OF REDUCING TRANSIENT WAFER TEMPERATURE DURING IMPLANTATION
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United States of America Patent
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Issued Date -
Jan 31, 2008
app pub date -
Jul 27, 2007
filing date -
Jul 28, 2006
priority date (Note) -
Abandoned
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Abstract
The present invention is directed to a method and apparatus for providing a uniform ion implantation in a single-workpiece two-dimensional mechanical scanning ion implantation system, wherein the transient temperature operating parameter is controlled based on mechanical rotation of the workpiece by a predetermined amount between two or more scans of the workpiece through a fixed ion beam. Rotating the workpiece between scans through the fixed ion beam allows for the transient temperature to decay sufficiently for more uniform ion implantation processes to proceed.
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