PIPING DESIGN FOR HIGH DENSITY PLASMA PROCESS CHAMBER

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United States of America Patent

APP PUB NO 20080023084A1
SERIAL NO

11692567

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention discloses a piping design for a high density plasma process chamber, wherein an extra pipe is added to between a process chamber and a mass flow controller, and the extra pipe together with a pump is used to drain out the gas, which cannot be monitored by the mass flow controller and survives in a gas injection pipe, lest the remaining gas pollute the deposited film or react with the process gas to induce an explosion in the succeeding deposition process.

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Patent Owner(s)

Patent OwnerAddress
GRACE SEMICONDUCTOR MANUFACTURING CORPORATIONNO 818 GUOSHOUJING ROAD ZHANGJIANG HIGH-TECH PARK SHANGHAI 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ping-Yi Shanghai, CN 9 75
Zhang, Xiao-Ping Shanghai, CN 20 159

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