NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
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United States of America Patent
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Issued Date -
Jan 24, 2008
app pub date -
Jun 5, 2007
filing date -
Jul 21, 2006
priority date (Note) -
Abandoned
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Abstract
This non-volatile semiconductor storage device includes a flip-flop in which two inverters, each consisting of a load transistor and a storage transistor connected in series, are cross-connected; and two gate transistors, each respectively connected to a node of the flip-flop on a side thereof. The storage transistors of the inverters are constituted by storage transistors which can be threshold voltage controlled by injection of electrons into the neighborhood of their gates. This non-volatile semiconductor storage device further includes two bit lines, each of which is connected to a respective one of the two gate transistors; a word line which is connected to both of the gate electrodes of the two gate transistors; a first voltage supply line which is connected to the sources of the storage transistors of the inverters; and a second voltage supply line which is connected to the sources of the load transistors of the inverters.
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