Multiplier And Image Sensor Employing Same
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United States of America Patent
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Issued Date -
Jan 24, 2008
app pub date -
Dec 20, 2005
filing date -
Dec 21, 2004
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Abstract
charge generated by the incident light is accumulated in a charge accumulation well in the semiconductor substrate immediately beneath the first electrode film when the gate voltage applied to the first electrode film is a first gate voltage, and the accumulated charge is amplified when the gate voltage is a second gate voltage.
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