Germanium deposition
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United States of America Patent
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Jan 20, 2009
Grant Date -
Jan 24, 2008
app pub date -
Oct 4, 2007
filing date -
Feb 27, 2004
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Abstract
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
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