Trench capacitor and method of manufacturing the same
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United States of America Patent
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Issued Date -
Jan 17, 2008
app pub date -
Jun 1, 2006
filing date -
Jun 1, 2006
priority date (Note) -
Abandoned
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Abstract
A trench capacitor and the method of manufacturing the same are provided. A rough polysilicon layer is formed on an inner electrode layer and subsequently mantled by a dielectric layer, and then filled up with an outer electrode layer. The present invention utilizes the characteristic that the rough polysilicon layer has bigger surface area to substantially increase the contact area between the dielectric layer and the inner electrode layer, and make the capacitance of the capacitor increase.
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