Semiconductor laser device and method of manufacturing the same
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United States of America Patent
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Issued Date -
Jan 17, 2008
app pub date -
Feb 20, 2007
filing date -
Apr 27, 2006
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Abandoned
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Abstract
A method of manufacturing semiconductor laser device capable of reducing .kappa.L, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby .kappa.L of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
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