Bandgap engineered charge storage layer for 3D TFT
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United States of America Patent
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Issued Date -
Jan 17, 2008
app pub date -
Jul 11, 2006
filing date -
Jul 11, 2006
priority date (Note) -
Abandoned
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Abstract
One SONOS-type device contains (a) a charge storage dielectric that includes a band engineered layer that has a wider bandgap facing one of a blocking dielectric and a tunneling dielectric than facing the other one of the blocking dielectric and the tunneling dielectric, and (b) a semiconductor channel region that contains polysilicon. Another SONOS-type device contains a charge storage dielectric that includes a band engineered layer that has a wider bandgap facing one of a blocking dielectric and a tunneling dielectric than facing the other one of the blocking dielectric and the tunneling dielectric. The device is located in a monolithic three dimensional memory array. Yet another SONOS-type device contains a charge storage dielectric that includes a band engineered layer that has a wider bandgap facing one of a blocking dielectric and a tunneling dielectric than facing the other one of the blocking dielectric and the tunneling dielectric and also includes at least one of: (a) a first dielectric layer located between the tunneling dielectric and the band engineered layer, and (b) a second dielectric layer located between the blocking dielectric and the band engineered layer.
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