Ultra high vacuum deposition of PCMO material
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United States of America Patent
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Issued Date -
Jan 17, 2008
app pub date -
Jul 14, 2006
filing date -
Jul 14, 2006
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Abandoned
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Abstract
Systems and methods are disclosed to form an exemplary memory structure by forming patterned semiconductor structures on a wafer; moving the wafer to a back-biased FTS deposition chamber; providing ultra high vacuum condition; and depositing PCMO material on patterned semiconductor structure.
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