Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
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United States of America Patent
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Oct 19, 2010
Grant Date -
Jan 17, 2008
app pub date -
Aug 13, 2007
filing date -
Feb 16, 2005
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Abstract
A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.
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