Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby
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United States of America Patent
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Issued Date -
Jan 10, 2008
app pub date -
Aug 24, 2005
filing date -
Aug 24, 2004
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Abstract
The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
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