Semiconductor protective structure for electrostatic discharge
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United States of America Patent
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app pub date -
Jun 20, 2007
filing date -
Jun 20, 2006
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Abandoned
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Abstract
A semiconductor protective structure suitable for electrostatic discharge with a field-effect transistor, whose source forms an emitter, whose body forms a base, and whose drain forms a collector of a bipolar transistor. A plurality of drain regions are formed within a body region of the field-effect transistor, and the drain regions are connected to one another by a conductor.
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