Semiconductor protective structure for electrostatic discharge
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United States of America Patent
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app pub date -
Jun 20, 2007
filing date -
Jun 20, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor protective structure suitable for electrostatic discharge with a field-effect transistor, whose source forms an emitter, whose body forms a base, and whose drain forms a collector of a bipolar transistor. A plurality of drain regions are formed within a body region of the field-effect transistor, and the drain regions are connected to one another by a conductor.
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| DE | B3 | DE102006028721 | Jun 20, 2006 |
| JP | A | JP2008004941 | Jun 20, 2007 |
| EP | A1 | EP1870938 | Jun 20, 2007 |
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Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 1.99 % this patent is cited more than
- 17 Age