Fabrication method and structure of an ITO anode containing nickel for improving injection efficiency of an OLED
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United States of America Patent
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Issued Date -
Dec 27, 2007
app pub date -
Jun 21, 2006
filing date -
Jun 21, 2006
priority date (Note) -
Abandoned
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Abstract
A fabrication method of an indium tin oxide (ITO) anode containing nickel for improving injection efficiency of an organic light emitting diode (OLED) includes various processes of preparing an ITO substrate with an anode, of preparing a target source of ITO containing nickel, and of mingling nickel on the anode of the ITO substrate by sputtering. The structure of the ITO anode containing nickel for an OLED includes a substrate with an anode mingled with nickel, a hole transport layer and an electron transport layer. Such an ITO anode is to have a higher work function that can lessen a great potential barrier between the ITO anode and a hole transport layer. So the threshold voltage and the turn-on voltage of OLED can be reduced to advance hole injection efficiency.
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