GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
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United States of America Patent
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app pub date -
Jun 14, 2007
filing date -
Feb 23, 2001
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Abstract
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
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