Importance

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Abstract

Provided is a technique for wafer plating treatment that ensures that the plating film thickness becomes uniform on the total area of a plated wafer surface. This method of wafer plating includes: arranging a wafer in an opening of a plating tank; bringing a peripheral side of the wafer and a cathode electrode into contact with each other; supplying a plating liquid; causing the plating liquid that has reached the wafer to flow in the direction of a periphery of a wafer surface to be plated; and supplying a plating current by an anode electrode arranged within the plating tank so as to be opposed to the wafer and the cathode electrode, whereby the wafer is subjected to a plating treatment. In this method, the anode electrode has a shape almost the same shape as the wafer surface to be plated, a plurality of peripheral-edge current supplying sections are provided in a peripheral edge of the anode electrode, and a central current supplying section is provided in a center of the anode electrode. A peripheral-edge plating current supplied from the peripheral-edge current supplying sections and a central plating current supplied from the central current supplying section can be adjusted.

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First Claim