Contact scheme for FINFET structures with multiple FINs
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United States of America Patent
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Issued Date -
Dec 13, 2007
app pub date -
Jun 7, 2006
filing date -
Jun 7, 2006
priority date (Note) -
Abandoned
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Abstract
A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. In accordance with the present invention, the inventive structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.
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