Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures
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United States of America Patent
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Issued Date -
Dec 6, 2007
app pub date -
Mar 24, 2005
filing date -
Mar 24, 2004
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Abstract
Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.
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