GATE DRIVING DEVICE FOR DRIVING INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF DRIVING THE SAME
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United States of America Patent
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Issued Date -
Dec 6, 2007
app pub date -
Apr 20, 2007
filing date -
Apr 20, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A gate driving device includes an IGBT and a gate drive circuit, which includes a gate resistor and a gate drive unit. The gate of the IGBT is connected to the gate resistor, and the emitter of the IGBT is connected to a low voltage potential. The peak impurity concentration of the collector of the IGBT is equal to or greater than 1.times.10.sup.16 cm.sup.-3, and the time constant, which is the product of a gate input capacitance (Cg) of the IGBT and a resistance value of the gate resistor (Rg) is equal to or less than 500 ns. The IGBT is turned ON or OFF by inputting an ON or OFF signal respectively to the gate via the gate resistor. The gate driving device can lower the spike voltage and reduce the turn-off power loss at the same time in an inductive load circuit when the IGBT is turned off.
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