METHOD FOR HEAT TREATING SINGLE CRYSTAL

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United States of America Patent

APP PUB NO 20070277726A1
SERIAL NO

11755787

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Abstract

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The present invention provides a method for heat treating a single crystal, comprising a step of heating a single crystal of a specific cerium-activated orthosilicate compound in an oxygen-containing atmosphere.

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Patent Owner(s)

Patent OwnerAddress
HITACHI CHEMICAL COMPANY LTDCHIYODA-KU TOKYO 100-6606

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurashige, Kazuhisa Hitachinaka-shi, JP 16 201
Kurata, Yasushi Hitachinaka-shi, JP 64 744
Shimura, Naoaki Hitachinaka-shi, JP 16 202
Usui, Tatsuya Hitachinaka-shi, JP 14 194

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