System and method for removal of photoresist and stop layer following contact dielectric etch
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United States of America Patent
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N/A
Issued Date -
Nov 22, 2007
app pub date -
May 18, 2006
filing date -
May 18, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In device fabrication, a photoresist layer is formed on an insulation layer, above a stop layer that is supported directly on an active device structure. Holes are needed through the insulation layer to reach a contact arrangement, defined by the active device structure in which each contact is covered by the stop layer and some of the contacts include a silicide material. A plurality of contact openings are etched through the insulation layer to expose the stop layer above each contact, which may produce etch related residue. The photoresist and residues are then stripped using a first plasma that contains oxygen, without removing the stop layer such that the stop layer protects the silicide material from the oxygen. Thereafter, etching is performed to remove the stop layer from the contacts using a second plasma that is oxygen free and which contains hydrogen.
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