Drive Circuit And Method For Semiconductor Devices

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United States of America Patent

APP PUB NO 20070268045A1
SERIAL NO

11419671

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Abstract

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The speed limitations of switching a gated semiconductor device are overcome by providing a dynamic driving voltage to the gate of the device being switched. This dynamic driving voltage may be provided by starting with a fixed amount of charge at a higher initial potential than the ultimate target gate voltage. The fixed charge and voltage are chosen so as not to exceed the device's specified maximum gate current or the device's maximum voltage between the gate and the source (punch-through voltage).

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Patent Owner(s)

Patent OwnerAddress
BRILLOUIN ENERGY CORP2625 ALCATRAZ AVENUE #296 BERKELEY CA 94705

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Godes, Robert E Berkeley, CA 11 26

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