Current mirror for high frequency monolithic integrated circuits
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United States of America Patent
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Issued Date -
Nov 15, 2007
app pub date -
May 11, 2006
filing date -
May 11, 2006
priority date (Note) -
Abandoned
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Abstract
A current-mirror circuit for monolithic integration in semiconductor microwave circuits is presented which overcomes the detrimental aspects of the emitter-follower current mirror resulting in improved accuracy and stability of the current mirror even under low voltage operation of circuits with high emitter-bias voltages such as GaAs. Advantageously the circuit can be implemented solely with NPN transistors and resistors allowing the circuit to be compatible with the reduced manufacturing processes and design options on high frequency materials such as GaAs and InP. The invention can be applied to low emitter-bias voltage materials such as Si and SiGe to offer increased accuracy and stability, and lower power supply levels.
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