Plasma-Assisted Deposition Method and System for Carrying Out the Same
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United States of America Patent
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Issued Date -
Nov 8, 2007
app pub date -
Aug 25, 2006
filing date -
Aug 25, 2004
priority date (Note) -
Abandoned
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Abstract
A fluorine-containing carbon film excellent in heat stability is formed by using C.sub.5F.sub.8 gas having a moisture content of 60.times.10.sup.-9 volume ratio or below. A purifier 2 packed with particles having hydrophilic or reducing surface layers is placed in a gas supply line connecting a process gas source 1 for supplying C.sub.5F.sub.8 gas and a film deposition unit 3 for depositing a fluorine-containing carbon film on a substrate by using a plasma produced by ionizing C.sub.5F.sub.8 gas. C.sub.5F.sub.8 gas is passed through the purifier 2 to remove moisture from the C.sub.5F.sub.8 gas. The C.sub.5F.sub.8 gas supplied to the film deposition unit 3 to deposit a fluorine-containing carbon film has a moisture content on the order of 20.times.10.sup.-9 volume ratio. A fluorine-containing carbon film thus deposited contains a very small amount of moisture. Consequently, desorption of fluorine due to moisture contained in the fluorine-containing carbon film when the fluorine-containing carbon film is heated by a subsequent heating process is not likely to occur and the fluorine-containing carbon film has high heat stability.
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