CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS
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United States of America Patent
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Issued Date -
Nov 8, 2007
app pub date -
Nov 13, 2006
filing date -
Nov 10, 2005
priority date (Note) -
Abandoned
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Abstract
Exemplary embodiments provide a scalable process for the growth of large scale and uniform III-N nanoneedle arrays with precise control of the position, cross sectional shape and/or dimensions for each nanoneedle. In an exemplary process, a plurality of nanoneedle array can be formed by growing one or more semiconductor material in a plurality of patterned rows of apertures with a predetermined geometry. The plurality of patterned rows of apertures can be formed though a thick selective nanoscale growth mask, which can later be removed to expose the plurality of nanoneedle arrays. The plurality of nanoneedle arrays can be connected top and bottom by a continuous coalesced epitaxial film, which can be used in a planar semiconductor process or be further configured as a photonic crystal to improve the output coupling of nanoscale optoelectronic devices such as LEDs and/or lasers.
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