Growth of nitride semiconductor crystals
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United States of America Patent
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Sep 10, 2013
Grant Date -
Nov 8, 2007
app pub date -
Aug 31, 2005
filing date -
Aug 31, 2004
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Abstract
A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate (12) in a reaction tube (11), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.
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