Capacitively Coupled Rf-Plasma Reactor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 1, 2007
app pub date -
Nov 11, 2005
filing date -
Nov 12, 2004
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An RF plasma reactor is provided for depositing semi-conductive layers on to very large glass areas. The RF plasma reactor includes a vacuum chamber, a reactor chamber, RF power supply, a matching network, first and second metallic plates located inside the vacuum chamber and a plasma-discharge region defined between the first and second metallic plates. The RF plasma reactor further includes a feed line and an impedance-transformation circuit both of which are electrically connected to the first metallic plate. The impedance-transformation circuit further includes a blocking-tuneable capacitor that transforms an impedance of the reactor.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully