METHOD FOR PRODUCING A LAYER CONSISTING OF A DOPED SEMICONDUCTOR MATERIAL
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United States of America Patent
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Issued Date -
Oct 25, 2007
app pub date -
Oct 4, 2005
filing date -
Oct 4, 2004
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Abandoned
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Abstract
The invention concerns a method for depositing a layer consisting of a doped semiconductor material on a substrate, as well as a device for implementing said method. According to said method, the doped semiconductor material contains at least one semiconductor matrix material and at least one doping material. Said method consists in vaporizing a mixture of the semiconductor material(s) and of the doping material(s) using a vaporizing source, then in depositing said mixture on the substrate.
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