Method of making a semiconductor with a high transmission CVD silicon nitride phase shift mask
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United States of America Patent
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Issued Date -
Oct 18, 2007
app pub date -
Apr 18, 2006
filing date -
Apr 18, 2006
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Abstract
A method for making a semiconductor device includes (a) providing a source of actinic radiation (601), (b) providing a mask formed from (i) a substrate that is substantially transparent to the actinic radiation, and (ii) a plurality of silicon nitride structures formed on the substrate using chemical vapor deposition and selective etching, wherein each silicon nitride structure has a transmission with respect to the actinic radiation that is within the range of about 30% to about 35%, and wherein the combination of each silicon nitride structure and the substrate imparts to the actinic radiation a phase change within the range of about 190.degree. to about 200.degree. (603), and (c) using the mask and the source of actinic radiation to impart a pattern to a semiconductor substrate (607, 609).
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